Cidronali, A. ; Camprini, M. ; Collodi, G. ; Nair, V. ; Manes, G. ; Lewis, J. ; Goronkin, H. (2002) Modeling and Investigation of Instabilities in Heterojunction Interband Tunnel FET for Microwave Applications. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.
Full text disponibile come:
| PDF 513Kb |
Abstract
An analytical treatment for the stability of Resonant Tunneling devices is proposed. It exploits a previously proposed approach for Resonant Tunneling Diodes with the aim of deriving an effective guideline for the use of such class of devices in MMIC applications. The discussion is carried out on a class of devices deriving from the integration of Heterojunction Interband Tunneling Diodes (HITD) with HEMTs on an InP substrate, for different cases of device parameters uncertainty and circuit topologies. Preliminary simulations and experimental validation results are provided in the paper.
| Document type: | Conference or Workshop Item (Paper) |
|---|---|
| Subjects: | Area 09 - Ingegneria industriale e dell'informazione > ING-INF/01 Elettronica |
| Depositato da: | CIB Staff |
| Depositato il: | 17 Jun 2004 |
| Last modified: | 16 May 2011 13:23 |
Solo per lo Staff dell Archivio: Gestione del documento

