Long, John R. (2005) Can silicon catch the millimeter wave? In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.
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Abstract
Transceiver designs implemented in silicon technology are most competitive in design cycle-time and performance versus cost when compared to other technologies. Scaling is driving silicon technology towards gain-bandwidths of 300GHz, enabling circuits operating deep into mm-wave frequency bands (i.e., well above 30 GHz). However, innovations in on-chip passive design and construction currently being pioneered in mixed-signal silicon technologies may be the real technology enablers at these frequencies. Relevant examples are presented from the author’s own work and the recent literature.
| Document type: | Conference or Workshop Item (Paper) |
|---|---|
| Subjects: | Area 09 - Ingegneria industriale e dell'informazione > ING-INF/01 Elettronica |
| Depositato da: | CIB Staff |
| Depositato il: | 15 Feb 2006 |
| Last modified: | 16 May 2011 13:49 |
Solo per lo Staff dell Archivio: Gestione del documento

