Subramaniam, S.C. ; Rezazadeh, A.A (2002) Investigation of He + -ion bombardment in the fabrication of planar InP/ InGaAs HBT structure. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.
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Abstract
We have investigated He+-ion bombardment on lattice-matched multi-layer InP/ In0.53Ga0.47As and In0.5Ga0.5P/ GaAs heterojunction bipolar transistor (HBT) structures. The bombardment of these structures was tested with a single energy implantation of helium-ions at 600 keV with a dose of 3x10 15 cm-2 at room temperature. Post implant annealing was performed for 60s from 50 to 575 o C. Maximum achievable sheet resistance of 3x10 7 W/sq was recorded for the GaAs-based base and collector layers of the InGaP/ GaAs HBT structure and 8x10 4 W/sq for the InGaAs-based collector layer of the InP/ InGaAs HBT structure. Comparison of annealing characteristics of bombarded GaAs- and InP- based HBT structures as a function of annealing temperature are reported here.
| Document type: | Conference or Workshop Item (Paper) |
|---|---|
| Subjects: | Area 09 - Ingegneria industriale e dell'informazione > ING-INF/01 Elettronica |
| Depositato da: | CIB Staff |
| Depositato il: | 17 Jun 2004 |
| Last modified: | 16 May 2011 13:23 |
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