Abstract

Effects of surface states on breakdown and gate-lag phenomena in narrowly-recessed-gate GaAs MESFETs are studied by two-dimensional (2-D) analysis. It is shown that the breakdown voltage could be raised when moderate densities of surface states are included. However, in a case with relatively high densities of surface states, the breakdown voltage could be drastically lowered when introducing a narrowly-recessed-gate structure. It is suggested that there is a trade-off relationship between raising the breakdown voltage and reducing the gate-lag.