Bobbo, B. M. ; Giorgio, A. ; Passaro, V. M. N. ; Perri, A. G. ; Pesare, M. (1999) A new 2-D GaAs MESFETs model based on a very accurate velocity - field expression. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.
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Abstract
A new physical model for GaAs MESFET drain current and gate capacitance based on the Chang-Fetterman velocity-electric field model, is presented. Accurate analytical expressions for the 2-D channel potential in the saturation region are adequately employed and mathematically manipulated in order to develop a 2-D C-V physical MESFET model without the main approximations used up to now in the previous physical models.
| Document type: | Conference or Workshop Item (Paper) |
|---|---|
| Subjects: | Area 09 - Ingegneria industriale e dell'informazione > ING-INF/01 Elettronica |
| Depositato da: | utente GAAS |
| Depositato il: | 12 Dec 2005 |
| Last modified: | 16 May 2011 13:47 |
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