Schreurs, D. ; Vandenberghe, S. ; Taher, H. ; Nauwelaers, B. (2002) ANN Model For SiGe HBTs Constructed From Time-Domain Large-Signal Measurements. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.
Full text disponibile come:
| PDF 191Kb |
Abstract
We construct a large-signal artificial neural network (ANN) model for SiGe HBTs, directly from time-domain large-signal measurements. It is known that HBTs are very sensitive to self-heating and therefore we explicitly study the effect on the model accuracy of the incorporation of the self-heating effect in the behavioural model description. Finally, we show that this type of models can be accurate at extreme operating conditions, where classical compact models start to fail.
| Document type: | Conference or Workshop Item (Paper) |
|---|---|
| Subjects: | Area 09 - Ingegneria industriale e dell'informazione > ING-INF/01 Elettronica |
| Depositato da: | CIB Staff |
| Depositato il: | 17 Jun 2004 |
| Last modified: | 16 May 2011 13:23 |
Solo per lo Staff dell Archivio: Gestione del documento

