Cheskis, D. ; Huang, C. (1999) GaAs optoelectronic integrated circuits for gigabit ethernet. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.
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Abstract
The ability to integrate MSM photodiodes on the same chips with trans impedance preamplifiers differentiates Gallium Arsenide (GaAs) from Silicon for Gigabit Ethernet applications. It also signals one of the first practical applications of optoelectronic integrated circuits (OEICs). In this talk, we'll review the explosive Gigabit Ethernet market and the various GaAs IC's and OEICs that are poised to serve the market.
| Document type: | Conference or Workshop Item (Paper) |
|---|---|
| Subjects: | Area 09 - Ingegneria industriale e dell'informazione > ING-INF/01 Elettronica |
| Depositato da: | utente GAAS |
| Depositato il: | 15 Feb 2006 |
| Last modified: | 16 May 2011 13:46 |
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