Masuda, Toru ; Landen, Lars ; Zirath, Herbert (2002) Low Power Single-Ended Active Frequency Doubler for a 60 GHz-Band Application. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.
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Abstract
The design and characterization of a 28-56 GHz frequency doubler based on a commercial foundry GaAs pHEMT process is described. To realize low power consumption and high conversion gain with small input power at the same time, we employed a simple circuit topology composed of a single-ended active frequency doubler and a frequency selective buffer amplifier. The doubler chip occupies 2 mm 2 chip area and delivers 4 dBm with an input power of 0 dBm. The excellent unwanted harmonics suppression of 29 dB and low power operation of 40 mW were obtained.
| Document type: | Conference or Workshop Item (Paper) |
|---|---|
| Subjects: | Area 09 - Ingegneria industriale e dell'informazione > ING-INF/01 Elettronica |
| Depositato da: | CIB Staff |
| Depositato il: | 17 Jun 2004 |
| Last modified: | 16 May 2011 13:23 |
Solo per lo Staff dell Archivio: Gestione del documento
