Nuttinck, S. ; Pinel, S. ; Gebara, E. ; Laskar, J. ; Harris, M. ; Shealy, J.R. (2002) Floating-Body Effects in AlGaN/GaN Power HFETs. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.
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Abstract
AlGaN/GaN power HFETs grown on a 200nm thick AlN sub-buffer layer are investigated. The presence of a steady kink in the static and dynamic drain-to-source current characteristics is attributed to floating-body (FB) effects that result from the AlN sub-buffer layer. A method to extract the off-state body-to-source voltage (VBS) is applied and the coherence of the results confirms that FB effects are present in this type of structures. To our knowledge, this is the first time that floating-body effects are reported and modeled in AlGaN/GaN HFETs.
| Document type: | Conference or Workshop Item (Paper) |
|---|---|
| Subjects: | Area 09 - Ingegneria industriale e dell'informazione > ING-INF/01 Elettronica |
| Depositato da: | CIB Staff |
| Depositato il: | 17 Jun 2004 |
| Last modified: | 16 May 2011 13:23 |
Solo per lo Staff dell Archivio: Gestione del documento
