Abstract

The performance of a compact power amplifier MMIC for 35 to 45 GHz applications is reported. Using a standard 6-inch, 0.15-µm GaAs power PHEMT technology on 100-µm substrate thickness, in combination with appropriate compact circuit topologies, this microstrip power amplifier achieved a linear gain of more than 24 dB over the 36 to 45 GHz frequency range. At 5 V and 500 mA bias, an output power at 1-dB compression of 26 dBm (P-1dB=400 mW) was measured in the 37~40 GHz band, with a saturated output power up to 0.5 Watt (Psat=27 dBm). The total chip size is only 3.6 mm2 (2.4 1.5 mm2); compared to conventional power amplifier MMICs operating at these frequencies, the combined output power and gain densities per chip area are a factor two higher.