Milosevic, Dusan ; van der Tang, Johan ; van Roermund, Arthur (2005) A high-efficiency HBT-based class-E power amplifier for 2 GHz. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.
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Abstract
A Class-E power amplifier (PA) based on a GaAs heterojunction bipolar transistor (HBT) is presented. The single-ended single-stage PA delivers 24 dBm of output power at 2 GHz, achieves a peak power added efficiency (PAE) of 68% and exhibits an excellent transducer power gain higher than 16 dB. The PAE remains high over a wide output power range. The circuit contains the standard 50-Ohm input and output match and is capable of high-efficiency power amplification of constant-envelope signals, which has been demonstrated with the GMSK signal. Both lumped- and distributed-components concepts for the practical implementation of the load network are presented and discussed.
| Document type: | Conference or Workshop Item (Paper) |
|---|---|
| Subjects: | Area 09 - Ingegneria industriale e dell'informazione > ING-INF/01 Elettronica |
| Depositato da: | CIB Staff |
| Depositato il: | 15 Feb 2006 |
| Last modified: | 16 May 2011 13:43 |
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