Streit, Dwight ; Tran, Liem ; Lai, Richard ; Chen, Yaochung ; Cowles, John ; Kobayashi, Kevin ; Oki, Aaron ; Block, Thomas ; Barksy, Mike ; Liu, Po-Hsin ; Elliott, Jeff (1997) An InP-based HEMT and HBT MMIC production line. In: Gallium Arsenide Applications Symposium. GAAS 1997, 3-5 September 1997, Bologna, Italy.
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Abstract
We report the development of an InP-based monolithic microwave integrated circuit production line to provide InP HEMT and InP HBT MMICs for both government and commercial applications. This three-inch fabrication facility was originally developed to produce high-performance InP HEMT and InP HBT MMICs specifically designed for government applications. Recent examples of performance capability include InP HEMT low-noise MMIC amplifiers with 12 dB gain at 155 Ghz, and the first fundamental frequency 94 Ghz HBT oscillator. However, InP-hased heterojunction devices also provide specific advantages for some high-volume commercial applications. We present here the production and performance results of InP HEMT and HBT MMICs for governmnent and commercial applications.
| Document type: | Conference or Workshop Item (Paper) |
|---|---|
| Subjects: | Area 09 - Ingegneria industriale e dell'informazione > ING-INF/01 Elettronica |
| Depositato da: | utente GAAS |
| Depositato il: | 23 Nov 2005 |
| Last modified: | 16 May 2011 13:43 |
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