Driad, R. ; Schneider, K. ; Makon, R. E. ; Lang, M. ; Nowotny, U. ; Aidam, R. ; Quay, R. ; Schlechtweg, M. ; Mikulla, M. ; Weimann, G. (2005) InP DHBT-based IC technology for high-speed data communications. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.
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Abstract
In this paper, we report the achieved performance of devices and integrated circuits (ICs) using a manufacturable InP DHBT-based technology.High speed MBE grown InGaAs/InP DHBTs with an effective emitter junction area of 4.8 µm2 exhibited peak fT and fMAX values of265and305GHz, respectively, at a collector currentdensity of 3.75 mA/µm2. Using this technology, a set of basic analog and digital IC building blocks,including lumped amplifiers, voltage controlled oscillators, multiplexers and demultiplexers, suitable for operation at 40 Gb/s and beyond, have been successfully designed and fabricated.
| Document type: | Conference or Workshop Item (Paper) |
|---|---|
| Subjects: | Area 09 - Ingegneria industriale e dell'informazione > ING-INF/01 Elettronica |
| Depositato da: | CIB Staff |
| Depositato il: | 06 Dec 2005 |
| Last modified: | 16 May 2011 13:43 |
Solo per lo Staff dell Archivio: Gestione del documento
