Hu, Juntao ; Sun, Mike ; Ho, Wu-Jing ; Qin, Yue ; Li, Jiang ; Day, Ding (2002) Characterization and Modeling of InP DHBTs. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.
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Abstract
InP DHBTs have been characterized and their large signal model has been developed. The devices showed excellent DC characteristics without current blocking up to very high current levels. The peak fT is 160GHz and peak fmax reaches 190GHz. Compared to InGaP HBTs, the extent of thermal resistance improvement in InP DHBT strongly depends on the area of the B-C junction. To take advantage of the low thermal resistivity of InP material, proper layout designs need to be implemented. Extracted large signal model exhibited excellent fitting with measurements. Based on this model, simulated and measured circuit performance showed excellent agreement.
| Document type: | Conference or Workshop Item (Paper) |
|---|---|
| Subjects: | Area 09 - Ingegneria industriale e dell'informazione > ING-INF/01 Elettronica |
| Depositato da: | CIB Staff |
| Depositato il: | 17 Jun 2004 |
| Last modified: | 16 May 2011 13:22 |
Solo per lo Staff dell Archivio: Gestione del documento
