Abstract

Silicon dioxide and silicon nitride as well as other insulating materials are used in micro-electromechanical systems. However, their tendency for electrostatic charging diminishes the device reliability. The charging effect becomes significant when these devices are subjected to ionizing radiation. The irradiation induced defects and charging depend on the nature of irradiation, the underlying metal layers and the metal-insulator interface properties. The sensitivity of RF microelectromechanical systems to ionizing radiation is presented taking into account experimental data and the simulation of charge generation and induced damage.