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A Non-Linear Statistical Model for GaAs FET Integrated Circuits

Centurelli, F. ; Di Martino, A. ; Marietti, P. ; Scotti, G. ; Tommasino, P. ; Trifiletti, A. (2002) A Non-Linear Statistical Model for GaAs FET Integrated Circuits. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

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Abstract

A new statistical non-linear model of GaAs FET MMIC’s which allows to represent distance-dependent technological parameter variations by means of equivalent circuit parameters is presented. An automatic procedure to extract the statistical model parameters from a database of DC and S-parameter measurements has been developed. The procedure performs the extraction of the covariance matrices of two FET devices at different mutual distances and uses them to build the multi-device MMIC covariance matrix. Capability to reproduce statistical distribution has been successfully checked by performing hypothesis tests of equivalence on S-parameters at different distances in the 1-5 GHz frequency range.

Document type:Conference or Workshop Item (Paper)
Subjects:Area 09 - Ingegneria industriale e dell'informazione > ING-INF/01 Elettronica
Depositato da:CIB Staff
Depositato il:17 Jun 2004
Last modified:16 May 2011 13:22

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