Abstract

A comprehensive study of the photoluminescence spectra and the electrophysical parameters have been performed on GaAs epitaxial layers grown by the low temperature liquid phase epitaxy (LPE) method from solution-melts doped with Yb impurity. The characteristic variations of the relative intensity of the components of the PL spectra, electroconductivity, concentration and mobility of the free charge carriers in the grown layers where established as a function of the concentration of the Yb impurity in the initial solutionmelts. A possible mechanism of the influence of the Yb impurity on the native defects and background impurities in the epitaxially grown GaAs is proposed.