Krausse, D. ; Quay, R. ; Tessmann, A. ; Massler, H. ; Leuther, A. ; Merkle, T. ; M uller, S. ; Schw orer, C. ; Mikulla, M. ; Schlechtweg, M. ; Weimann, G. (2004) Robust GaN HEMT Low-Noise Amplifier MMICs for X-Band Applications. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.
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Abstract
This work presents MMIC low-noise amplifiers based on AlGaN/GaN HEMT technology on SiC substrate for robust receiver applications at X-band between 8 GHz and 11 GHz. Three versions of one-stage and two versions of two-stage amplifiers are presented with a noise figure of 1.81 dB at 10 GHz and 18 dB of small-signal gain for the two-stage device fully integrated in coplanar passive technology. The paper describes modeling and circuit design, bias dependence of the small-signal and noise circuit parameters of the MMICs realized, and highpower and intermodulation behavior.
| Document type: | Conference or Workshop Item (Paper) |
|---|---|
| Subjects: | Area 09 - Ingegneria industriale e dell'informazione > ING-INF/01 Elettronica |
| Depositato da: | CIB Staff |
| Depositato il: | 16 Jun 2005 |
| Last modified: | 16 May 2011 13:40 |
Solo per lo Staff dell Archivio: Gestione del documento
