Lutz, C.R. ; Deluca, P.M. ; Stevens, K.S. ; Landini, B.E. ; Welser, R.E. ; Welty, R.J. ; Asbeck, P.M. (2002) Enhancing the Device Performance of III-V Based Bipolar Transistors. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.
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Abstract
Superior DC and RF performance are obtained using InGaP/GaInAsN and InP/GaInAs double heterojunction bipolar transistors with compositionally graded base layers. By grading the base layer energy band-gap, we achieve nearly a 100% improvement in DC current gain and as much as a 15% increase in the unity gain cutoff frequency (ft) relative to baseline constant-composition base layer devices. In InGaP/GaInAsN DHBTs, DC current gains as high as 250 and cutoff frequencies of 60 GHz are demonstrated for devices with a collector thickness of 400 nm and BVceo values of 8.4 Volts. Graded-base InP/InGaAs DHBTs with an ft of 135 GHz are also demonstrated. Estimations of the ft*BVceo figure-of-merit are used to compare performance of these devices to existing technologies.
| Document type: | Conference or Workshop Item (Paper) |
|---|---|
| Subjects: | Area 09 - Ingegneria industriale e dell'informazione > ING-INF/01 Elettronica |
| Depositato da: | CIB Staff |
| Depositato il: | 17 Jun 2004 |
| Last modified: | 16 May 2011 13:22 |
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