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Using HBT BiCMOS differential structures at Microwaves in SiGe technologies

Bazzi, H. ; Bosse, S. ; Delage, S. L. ; Barelaud, Bruno ; Billonnet, L. ; Jarry, B. (2002) Using HBT BiCMOS differential structures at Microwaves in SiGe technologies. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

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Abstract

This paper discusses the use of differential structures for active functions at microwaves. Starting from the example of a single-ended LNA structure, we show the advantages of using a differential approach with the design examples of a LNA, a floating negative resistance and a differential compensated LC filter structure.

Document type:Conference or Workshop Item (Paper)
Subjects:Area 09 - Ingegneria industriale e dell'informazione > ING-INF/01 Elettronica
Depositato da:CIB Staff
Depositato il:17 Jun 2004
Last modified:16 May 2011 13:22

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