Soubercaze-Pun, G. ; Tartarin, J.G. ; Bary, L. ; Delage, S. L. ; Plana, R. ; Graffeuil, J. (2004) Carrier’s transport mechanisms investigations in AlGaN/GaN HEMT thanks to physical modelling and low frequency noise measurements. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.
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Abstract
This paper deals with the carrier’s transport mode involved in AlGaN/GaN HEMT grown on sapphire substrate according to biasing conditions. Low frequency noise measurements on the drain current source are found to be closely related to the path of the carriers occurring in the two dimensions electron gas (2DEG) and in the AlGaN layer: thus a correlation is found between the 1/f γ frequency index γ and the biasing condition of the device. Physical modelling is used in order to corroborate the γ dependence with the transport mechanism of the carriers, thanks to DC simulations and energetic band diagrams analysis.
| Document type: | Conference or Workshop Item (Paper) |
|---|---|
| Subjects: | Area 09 - Ingegneria industriale e dell'informazione > ING-INF/01 Elettronica |
| Depositato da: | CIB Staff |
| Depositato il: | 15 Jun 2005 |
| Last modified: | 16 May 2011 13:39 |
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